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深亚微米工艺下片上存储结构的体系结构级功耗模型

An Architecture-Level Power Model of On-Chip Memories in Deep-Submicron Technology
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摘要 半导体工艺的持续发展和芯片集成度的显著提高,导致芯片发热量的增大与可靠性的下降,限制了性能的进一步提升,功耗已经成为微处理器设计领域的一个关键问题.片上存储结构作为微处理器的重要组成部分,在微处理器总功耗中占据了很大的比重.Wattch为片上存储结构提供了动态功耗模拟模型,但不能反映最新的结构和工艺变化.结合CACTI中存储结构的峰值功耗估算模型,改进了Wattch中存储结构的动态功耗模拟模型,不仅扩展了模型适用的工艺范围,也反映了10年间存储结构的改进.利用改进的模型探索了片上存储结构在深亚微米工艺下的功耗. 半导体工艺的持续发展和芯片集成度的显著提高,导致芯片发热量的增大与可靠性的下降,限制了性能的进一步提升,功耗已经成为微处理器设计领域的一个关键问题.片上存储结构作为微处理器的重要组成部分,在微处理器总功耗中占据了很大的比重.Wattch为片上存储结构提供了动态功耗模拟模型,但不能反映最新的结构和工艺变化.结合CACTI中存储结构的峰值功耗估算模型,改进了Wattch中存储结构的动态功耗模拟模型,不仅扩展了模型适用的工艺范围,也反映了10年间存储结构的改进.利用改进的模型探索了片上存储结构在深亚微米工艺下的功耗.
出处 《计算机研究与发展》 EI CSCD 北大核心 2012年第S1期104-110,共7页 Journal of Computer Research and Development
基金 "核高基"国家科技重大专项基金项目(2009zx01028-002-002) 高等学校博士学科点基金项目(20094307120007)
关键词 微处理器 存储 功耗 体系结构 深亚微米 microprocessor memory power architecture deep-submicron
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参考文献8

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