Low temperature synthesis of SiCN nanostructures

Silicon carbon nitride (SiCN) nanowires, nanorods and nanotubes have gained much attention due to their excellent field emission and photoluminescence properties. These nanostructures were usually grown using catalysts at high temperature (800―1000℃). In this paper, synthesis of SiCN nanostruc-tures at a temperature less than 500℃ is reported. Various kinds of SiCN nanostructures were synthe-sized using microwave plasma chemical vapor deposition method. Gas mixtures of CH4, H2 and N2 were used as precursors and Si chips were inserted in the sample holder at symmetrical positions around the specimen as additional Si sources. Metallic gallium was used as the liquid medium in a mechanism similar to vapor-liquid-solid. Morphologies of the resultant were characterized by field emission scan-ning electron microscopy. Energy dispersive spectrometry and X-ray photoelectron spectroscopy were used to characterize their compositions and bonding states.

Silicon carbon nitride (SiCN) nanowires, nanorods and nanotubes have gained much attention due to their excellent field emission and photoluminescence properties. These nanostructures were usually grown using catalysts at high temperature (800–1000 °C). In this paper, synthesis of SiCN nanostructures at a temperature less than 500°C is reported. Various kinds of SiCN nanostructures were synthesized using microwave plasma chemical vapor deposition method. Gas mixtures of CH4, H2 and N2 were used as precursors and Si chips were inserted in the sample holder at symmetrical positions around the specimen as additional Si sources. Metallic gallium was used as the liquid medium in a mechanism similar to vapor-liquid-solid. Morphologies of the resultant were characterized by field emission scanning electron microscopy. Energy dispersive spectrometry and X-ray photoelectron spectroscopy were used to characterize their compositions and bonding states.