期刊文献+

光诱导电流测试技术

REVIEW OF LASER BEAM INDUCED CURRENT TECHNOLOGY
下载PDF
导出
摘要 结合国内外对光诱导电流测试技术的研究和应用,为了更深入了解这项技术,对模型做了较为细致的介绍。综合介绍系统构造、原理、信号的影响因素、两种测试模式(侧向模式、标准模式)的模型及其应用。为今后LBIC技术的使用和发展打下基础。 结合国内外对光诱导电流测试技术的研究和应用,为了更深入了解这项技术,对模型做了较为细致的介绍。综合介绍系统构造、原理、信号的影响因素、两种测试模式(侧向模式、标准模式)的模型及其应用。为今后LBIC技术的使用和发展打下基础。
作者 叶舟 韩培德
出处 《太阳能学报》 EI CAS CSCD 北大核心 2012年第S1期19-27,共9页 Acta Energiae Solaris Sinica
基金 国家自然科学基金(60776046 60976046 60837001 61021003) 国家重点基础研究发展(973)计划(2010CB933800)
关键词 LBIC 太阳电池 侧向模式 标准模式 扫描 LBIC solar cells lateral mode standard mode scan
  • 相关文献

参考文献36

  • 1张可锋,吴小利,唐恒敬,乔辉,贾嘉,李雪,龚海梅.利用LBIC技术对InGaAs平面结器件结区特性的研究[J].激光与红外,2007,37(B09):947-950. 被引量:2
  • 2Chenming Hu and Clifford Drowley.Determination of diffusion length and surface recombination velocity by light excitation. Solid State Electronics . 1978
  • 3F. Berz and H. K. Kuiken&#x00.Theory of life time measurements with the scanning electron microscope: Steady state. Solid State Electronics . 1976
  • 4BAJAJ J,BUBULAC L O,NEWMAN P R,et al.Spatial mapping of electrically active defects in HgCdTe using laser beam induced current. Journal of Vacuum Science and Technology . 1987
  • 5P.Basore.Numerical modeling of textured silicon solar cells using PC-1D. IEEE Transactions on Electron Devices . 1990
  • 6Michael Stemmer.Mapping of the local minority carrier diffusion length in silicon wafers. Applied Surface Science . 1993
  • 7S Martinuzzi,and M Stemmer.Mapping of defects and their recombination strength by a light-beam-induced current in silicon wafers. Materials science&engineering.B,Solid-state materials for advanced technology . 1994
  • 8P.Würfel,T.Trupke,T.Puzzer.Diffusion lengths of silicon solar cells from luminescence images. Journal of Applied Physiology . 2007
  • 9van,Roosbroeck,W.Injected current carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities. Journal of Applied Physics . 1955
  • 10Zook J David.Effects of grain boundaries in polycrystalline solar cells. Applied Physics Letters . 1980

二级参考文献10

  • 1G H Olsen,A M Joshi,V S Ban.Current status of InGaAs detector arrays for 1-3 μm[C]//SPIE,1991,1540:596-605.
  • 2A M Joshi,V S Ban,S Mason,et al.512 and 1024 element linear InGaAs detector arrays for near infrared (1-3 μm) environmental sensing[C]//SPIE,1992,1735:287-295.
  • 3Olsen G H,Joshi A M,Ban V S,et al.Multiplexed 256 element InGaAs detector arrays for 0.8-1.7 μm room-temperture operation[C]//SPIE,1988,972:279-285.
  • 4Kozlowski L J,Tennant W E,Zandian M,et al.SWIR staring FPA performance at room temperature[C]//SPIE,1996,2746:93-100.
  • 5J P Moy,J J Chabbal,S Chaussat,et al.Buttable arrays of 300 multiplexed InGaAs photodiodes for SWIR imaging[C]//SPIE,1986,686:93-95.
  • 6J P Moy,X Hugon,J Chabbal,et al.3000 InGaAs photodiode multiplexed linear array for SPOT4 SWIR channel[C]//SPIE,1989,1107:137 -151.
  • 7Ruud W M Hoogeveen,Ronald J van der A,Albert P H Goede.Extended wavelength InGaAs infrared (1.0-2.4 μm)detector arrays on Sciamachy for space-based spectrometry of the Earth atmosphere[J].Infrared Physics & Technology,2001,42:1-16.
  • 8Himanshu Dave,Chirag Dewan,Sandip Paul,et al.AWiFS C for Resourcesat[C]//SPIE,2006,6405.
  • 9Ong V K S,Wu Dethau.Determination of diffusion length from within a confined region with the use of EBIC[J].IEEE transactions on electron devices,2001,48 (2):332-337.
  • 10Redfern D A,Thomal J A,Dell J M,et al.Diffusion length measurements using laser beam induced current[J].Conf on Optoelectron and Microelectron Mat and Dev IEEE Proc.,2000:463-466.

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部