摘要
The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.
The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2012年第S1期24-27,共4页
Rare Metal Materials and Engineering
