摘要
Boron doped diamond(BDD)thin films have been deposited on Ti substrate with Ta interlayer by MP-CVD(microwave plasma chemical vapor deposition),and Ta interlayer was deposited by magnetron sputtering.The physical and electrochemical behaviors of the Ti/Ta/BDD electrode and its application in electrochemical oxidation of wastewater containing 2,4-dichlorophenol were studied.Raman spectroscopy and field emission scanning electron microscopy(FESEM)demonstrates that the films obtained exhibit well-defined diamond features.XRD spectroscopy shows no TiC in the BDD film with Ta interlayer.Electrochemical measurement shows the BDD electrode behaves low background current and wide working potential window up to 4 V.Further,the removal efficiency of chemical oxygen demand(COD)of the BDD electrodes were evaluated by the electrochemical oxidation of 2,4-dichlorophenol.
Boron doped diamond(BDD)thin films have been deposited on Ti substrate with Ta interlayer by MP-CVD(microwave plasma chemical vapor deposition),and Ta interlayer was deposited by magnetron sputtering.The physical and electrochemical behaviors of the Ti/Ta/BDD electrode and its application in electrochemical oxidation of wastewater containing 2,4-dichlorophenol were studied.Raman spectroscopy and field emission scanning electron microscopy(FESEM)demonstrates that the films obtained exhibit well-defined diamond features.XRD spectroscopy shows no TiC in the BDD film with Ta interlayer.Electrochemical measurement shows the BDD electrode behaves low background current and wide working potential window up to 4 V.Further,the removal efficiency of chemical oxygen demand(COD)of the BDD electrodes were evaluated by the electrochemical oxidation of 2,4-dichlorophenol.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2012年第S1期247-249,共3页
Rare Metal Materials and Engineering
