摘要
A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO 3-δ and p-type Si fabricated by laser molecular beam epitaxy.The responsivity of open-circuit photovoltage can reach 10 4 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order.We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO 3-δ /Si heterojunction.From the experimental results,some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.
A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO 3-δ and p-type Si fabricated by laser molecular beam epitaxy.The responsivity of open-circuit photovoltage can reach 10 4 V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-μW order.We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO 3-δ /Si heterojunction.From the experimental results,some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.
作者
WEN Juan 1,GUO HaiZhong 1,XING Jie 2,Lü HuiBin 1,JIN Kui-Juan 1,HE Meng 1 & YANG GuoZhen 1 1 Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China
2 School of Materials Sciences and Technology,China University of Geosciences,Beijing 100083,China
基金
supported by the National Basic Research Program of China (Grant No.2007CB935700)
the National Natural Science Foundation of China (Grant No.50672120)
