Effect of annealing temperature on multiferroic properties of Bi_(0.85)Nd_(0.15)FeO_3 thin films prepared by sol-gel method 被引量：2

Effect of annealing temperature on multiferroic properties of Bi_(0.85)Nd_(0.15)FeO_3 thin films prepared by sol-gel method

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摘要 Bi0.85Nd0.15FeO3 films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method,and annealed at different temperatures.The effect of annealing temperature on the crystal structure,dielectric,ferroelectric,and ferromagnetic properties was investigated.When the Bi0.85Nd0.15FeO3 films were annealed at 490-600°C,the single phase was obtained.Bi0.85Nd0.15FeO3 film annealed at 600°C showed good multiferroic properties with εr of 145 (at 1 MHz),Ms of 44.8 emu/cm3,and 2Pr of 16.6 μC/cm2. Bi0.85Nd0.15FeO3 films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method,and annealed at different temperatures.The effect of annealing temperature on the crystal structure,dielectric,ferroelectric,and ferromagnetic properties was investigated.When the Bi0.85Nd0.15FeO3 films were annealed at 490-600°C,the single phase was obtained.Bi0.85Nd0.15FeO3 film annealed at 600°C showed good multiferroic properties with εr of 145 (at 1 MHz),Ms of 44.8 emu/cm3,and 2Pr of 16.6 μC/cm2.

作者 GOTO Takashi

机构地区 Institute for Materials Research

出处《Science China(Technological Sciences)》 SCIE EI CAS 2010年第6期1572-1575,共4页 中国科学（技术科学英文版）

基金 supported financially by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470) in part by Global COE Program "Materials Integration (International Center of Education and Research),Tohoku University," MEXT,Japan

关键词 Bi0.85Nd0.15FeO3 thin films sol-gel method annealing temperature ferroelectric PROPERTIES FERROMAGNETIC PROPERTIES Bi0.85Nd0.15FeO3 thin films sol-gel method annealing temperature ferroelectric properties ferromagnetic properties

分类号 TG156.2 [金属学及工艺—热处理]

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参考文献18

1Guo D,,Zhang L,Li M,et al.Effect of Ho content on microstructure and ferroelectric properties of Bi4-xHoxTi3O12 thin films prepared by sol-gel method. Journal of the American Ceramic Society . 2008
2Wang J,Neaton J B,Zheng H,et al.Epitaxial BiFeO3 multiferroic thin film heterostructures. Science . 2003
3Ederer C,Spaldin N A.Magnetoelectrics:A new route to magnetic ferroelectrics. Nature Materials . 2004
4Cheong S W,Mostovoy M.Multiferroics:A magnetic twist for ferroelectricity. Nature Materials . 2007
5Zheng H,Wang J,Lofland S E,et al.Multiferroic BaTiO3-CoFe2 O4 Nanostructures. Science . 2004
6Eerenstein W,,Mathur N D,Scott J F.Multiferroic and magneto- electric materials. Nature . 2006
7Zhao T,Scholl A,Zavaliche F,et al.Electrical control of antiferromagnetic domains in multiferroic BiFeO3films at room temperature. Nature Materials . 2006
8Yang S Y,Zavaliche F,Mohaddes-Ardabili L.Metalorganic chemical vapor deposition of lead-free ferroelectricBiFeO3films for memory applications. Applied Physics Letters . 2005
9Hiroshi Uchida,Risako Ueno,and Hiroshi Funakubo.Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films. Journal of Applied Physics . 2006
10Das S R,Bhattacharya P,Choudhary R NP,et al.Effectof La substitution on structural and electrical properties ofBiFeO3thin film. Journal of Applied Physics . 2006

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Effect of annealing temperature on multiferroic properties of Bi_(0.85)Nd_(0.15)FeO_3 thin films prepared by sol-gel method 被引量：2

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