摘要
In order to enhance light absorption of thin film poly-crystalline silicon(TF poly-Si)solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory,the effective photon trapping flux(EPTF)and effective photon trapping efficiency(EPTE)were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures.The EPTF,EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer.With an optimum size and density of SiO2/Au nanoshell light trapping layer,the EPTE could reach up to 40%due to the enhancement of light trapping over a broad spectral range,especially from 500 to 800 nm.
In order to enhance light absorption of thin film poly-crystalline silicon(TF poly-Si)solar cells over a broad spectral range, and quantify the effectiveness of nanoshell light trapping structure over the full solar spectrum in theory,the effective photon trapping flux(EPTF)and effective photon trapping efficiency(EPTE)were firstly proposed by considering both the external quantum efficiency of TF poly-Si solar cell and scattering properties of light trapping structures.The EPTF,EPTE and scattering spectrum exhibit different behaviors depending on the geometric size and density of nanoshells that form the light trapping layer.With an optimum size and density of SiO2/Au nanoshell light trapping layer,the EPTE could reach up to 40%due to the enhancement of light trapping over a broad spectral range,especially from 500 to 800 nm.
作者
BAI YiMing 1 ,WANG Jun 2 ,CHEN NuoFu 1,3 ,YAO JianXi 1 ,YIN ZhiGang 3 ,ZHANG Han 3 , ZHANG XingWang 3 ,HUANG TianMao 3 ,WANG YanShuo 3 &YANG XiaoLi 3 1School of Renewable Energy Engineering,North China Electric Power University,Beijing 102206,China
2 National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912,Beijing 100083,China
3 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912,Beijing 100083,China
