摘要
Si-doped (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition.The optical and electrical properties of the Si-doped a-plane GaN films were investigated by photoluminescence spectroscopy,high-resolution X-ray diffraction,atomic force microscopy and Hall measurement.The results showed that the morphology and the crystal quality slightly degraded with Si doping.The yellow luminescence was enhanced with increasing the flow rate of the SiH4.The significant improvement of the mobility should associate with some of the vacancy filled with the Si.
Si-doped (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition.The optical and electrical properties of the Si-doped a-plane GaN films were investigated by photoluminescence spectroscopy,high-resolution X-ray diffraction,atomic force microscopy and Hall measurement.The results showed that the morphology and the crystal quality slightly degraded with Si doping.The yellow luminescence was enhanced with increasing the flow rate of the SiH4.The significant improvement of the mobility should associate with some of the vacancy filled with the Si.
作者
XU ShengRui1,ZHOU XiaoWei1,HAO Yue1,YANG LiNan1,ZHANG JinCheng1,MAO Wei1,YANG Cui1,CAI MaoShi1,OU XinXiu1,SHI LinYu1 & CAO YanRong2 1 Key Lab of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi’an 710071,China
2 School of Electronical & Machanical Engineering,Xidian University,Xi’an 710071,China
基金
supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002)
the National Natural Science Founda-tion of China (Grant Nos. 60890191, 60736033)
the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009)
