掺铝P型单晶硅尾料真空冶炼提纯研究(英文)

Experimental Research on Purifying the Tailing Material of Al-doped P-type Mono-crystal Silicon by Vacuum Metallurgy

利用真空蒸发和定向凝固技术去除掺铝P型单晶硅尾料中铝杂质的方法,通过晶相仪、EBSD和ICP-AES检测,被证实是非常有效的。铝含量检测结果表明:提纯后的铝含量沿多晶硅铸锭纵向由下到上逐渐增高,且总量较提纯前有较大幅度的降低。

The strategy that is based on utilizing vacuum evaporation and directional solidification techniques is proved to be a very efficient approach to remove aluminum from tailing material of Al-doped p-type mono-crystal silicon.Optical metallographic microscope patterns and EBSD(Electron Back Scattering Diffraction) statistic diagrams illustrate the behaviors of crystal growth during the purification processes.ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrophotometry) analysis is used to detect the concentration of aluminum.The analysis results indicate that the concentration of aluminum increases along the longitudinal direction from bottom to top of ingot,and the impurities are remarkably eliminated.