高浓度Sm_2O_3掺杂的BIT陶瓷微结构与电性能研究

Investigation on Microstructure and Electrical Properties of Sm_2O_3-doped Bismuth Titanate Ceramics

采用固相烧结工艺制备了高浓度Sm2O3掺杂的Bi4Ti3O12(BIT)基陶瓷材料。研究了不同的Sm2O3掺杂浓度和温度对BIT基陶瓷材料的显微结构及电性能的影响。结果表明:当Sm2O3浓度为12.0 mol%时,有Bi0.56Sm1.44Ti2O7第二相出现,BIT陶瓷室温介电常数为114,室温介质损耗(tanδ)为0.002;当Sm2O3浓度为6.0mol%时,陶瓷材料的室温介电常数为119,室温介质损耗(tanδ)为0.0027。

High concentration Sm2O3 doped Bi4Ti3O12(BIT)-based ceramics were prepared by solid-state reaction method.The influence of the concentration of Sm2O3-doping and temperature on the crystal phase,microstructure and electrical properties of the sample were investigated.The results indicated that the formation of the new compound was observed as Bi0.56Sm1.44Ti2O7,the dielectric constant and dielectric loss(tan δ) were 114 and 0.002 respectively in room temperature when the concentration of Sm2O3-doping was 12.0 mol%.Correspondingly,they were 119 and 0.0027 respectively as the concentration of Sm2O3 was 6.0 mol%.