Shadow Effect and Its Revisal in Grid-Enhanced Plasma Source with Ion Implantation Method
被引量:1
参考文献12
-
1Chen J, BLanchard J, Conrad J R aad Dodd R A 1992 Surf.Coat. Technol 53 267.
-
2Mantle J V, Brown I G, Cheung N W and Collins G A 1996 MRS Bull. 21 52.
-
3Ensinger W 1996 Rev, Sci. Instram, 67 318.
-
4Demokan O 2000 IEEE Trans,Plasma Sci,28 1720.
-
5Shinji S 1998 Thin Solid Films 316 165.
-
6Sugimoto S,Uchikawa Y,Kuwahara K and Kuwahara H 1999 Japan,J,Appl.Phys.38 4342.
-
7Sun M,Liu C Z and Yang S Z 1996 J,Vac.Sci.Technol A 14 367.
-
8Liu B,Zhang G L and Yang S Z 2001 J.Vac.Sci.Technol.A 19 295.
-
9Zhang G L,Wang J L and Yang S Z 2003 Acta Phys.Sin 52 2213(in Chinese).
-
10Davis C A 1993 Thin Solid Films 226 30.
同被引文献5
-
1WANGJiuli,ZHANGGuling,WANGYounian,LIUYuanfu,LIUChizi,YANGSize.Simulation methods of ion sheath dynamics in plasma source ion implantation[J].Chinese Science Bulletin,2004,49(8):757-765. 被引量:2
-
2张谷令,王久丽,刘元富,刘赤子,杨思泽.Properties of TiN coating on 45# steel for inner surface modification by grid-enhanced plasma source ion implantation method[J].Chinese Physics B,2004,13(8):1309-1314. 被引量:2
-
3张谷令,王久丽,吴杏芳,冯文然,陈光良,顾伟超,牛二武,范松华,刘赤子,杨思泽.Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation[J].Chinese Physics Letters,2006,23(5):1241-1244. 被引量:1
-
4王久丽,杨思泽,等.Pulsed Ion Sheath Dynamics in a Cylindrical Bore for Inner Surface Grid—Enhanced Plasma Source Ion Implantation[J].Chinese Physics Letters,2002,19(10):1473-1475. 被引量:2
-
5张谷令,王久丽,杨武保,范松华,刘赤子,杨思泽.内表面栅极等离子体源离子注入TiN薄膜及其特性研究[J].物理学报,2003,52(9):2213-2218. 被引量:17
引证文献1
-
1张谷令,吴杏芳,顾伟超,陈光良,冯文然,牛二武,李立,吕国华,陈皖,范松华,刘赤子,杨思泽.等离子体方法实现金属管件内表面改性研究进展[J].自然科学进展,2006,16(11):1371-1378. 被引量:1
-
1欧阳茂解.离子注入技术在核辐射探测器中的应用[J].防化研究,2004(1):21-25. 被引量:1
-
2Tan Jilian,Li Cunfan and Bao Zhiqin.A Semiconductor Position Sensitive Detector Fabricated by Ion Implantation Technique[J].IMP & HIRFL Annual Report,1994(0):35-35.
-
3An Apparatus for Determining Uniformity of Beta-Source in Medical Appliance[J].Annual Report of China Institute of Atomic Energy,1995(0):138-139.
-
4李海霞,李占奎,王方聪,李荣华,陈翠红,王秀华,戎欣娟,刘凤琼,王柱生,李春艳,祖凯玲,卢子伟.Application of stratified implantation for silicon micro-strip detectors[J].Chinese Physics C,2015,39(6):85-88.
-
5袁海涛,胡焕林,胡纯栋.离子束生物工程学装置现状和发展[J].真空,2000,37(4):10-13. 被引量:3
-
6郑中山,刘忠立,张国强,李宁,范楷,张恩霞,易万兵,陈猛,王曦.Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET[J].Chinese Physics B,2005,14(3):565-570.
-
7LIU HongRui,WANG ShuaiMin,ZHANG JinWen.The effect of the boron-ions implantation on the performance of RADFETs[J].Science China(Technological Sciences),2016,59(11):1785-1790.
-
8Cyclotrongroup.Progress in a High Beam H^- Ion Source and Axial Injection System[J].Annual Report of China Institute of Atomic Energy,1999(0):30-30.
-
9Progress in a High Beam H^- Ion Source and Axial Injection System[J].Annual Report of China Institute of Atomic Energy,2000(0):31-32.
-
10Imvestigation of Limiteed Streamer Tube with Small Cross-Section[J].Annual Report of China Institute of Atomic Energy,1994(0):59-60.
;