摘要
在实验中对InGaAs/AlAs/InP共振遂穿二极管(RTD)进行了优化设计,并用MBE设备在(100)半绝缘InP单晶片上生长了RTD外延材料。采用电子束光刻工艺和空气桥互连技术,制作了InP基RTD器件。在室温下测试了器件的电学特性,峰值电流密度24.6kA/cm2,峰谷电流比为8.6。通过MATLAB软件对器件I-V测试曲线进行了数值拟合,结果与实验数据吻合得很好。
The In0.53Ga0.47As/AlAs/InP resonant tunneling diodes(RTDs)by using air bridge technology with electron beam lithography processing was designed.The epitaxial layers of the RTD were grown on semi-insulating(100)InP substrates by molecular beam epitaxy(MBE).RTDs with peak current densities of 24.6 kA/cm2 and peak to valley current ratio of 8.6 were demonstrated at room temperature.Fitting of the RTD I-V curve with MATLAB software was done and the results showed an excellent match to the experimental data.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期1-3,共3页
Semiconductor Technology
基金
国家部委预研基金(9140C1404030705)
