摘要
采用平面微带线结构及内匹配GaAs金属半导体场效应晶体管的Ku波段大功率脉冲功率放大器模块,研究了在Ku波段脉冲功率放大器研制中的稳定性问题,设计了双层腔体结构对低频电路和高频电路进行隔离,并在偏置网络中加入稳定性网络,消除了低频振荡和参量振荡,有效提高了功率放大器的稳定性。对直流供电电路进行优化,使电路可以根据不同应用需要灵活调整工作状态设计了储能电容电路,提高了脉冲功率放大器的工作效率。研制成功的Ku波段脉冲功率放大器模块,在13.5～14.0GHz工作频段,冲重复频率3kHz,占空比10%,功率增益Gp≥44dB,输出脉冲峰值功率Ppk≥30W,总体工作效率η≥26%(ClassB)。功率放大器在DC～14.0GHz内稳定,没有振荡现象发生。
A Ku-band large power pulsed power amplifier module utilizing planar micro-strip lines and internal-matched GaAs MESFETs was reported.In order to improve the stability of the power amplifier,a two-layer chamber structure was designed to isolate the low-frequency and high-frequency circuits.In addition,a stabilization network was inserted to the bias network to eliminate the low-frequency oscillation and parametrical oscillation.The operation state can be adjusted easily with benefits from the DC power supply circuit,together with the energy storage capacitance circuit,this technique can improve the efficiency of the pulsed power amplifier.When operating over 13.5 to 14.0 GHz at a duty cycle of 10% with 3 kHz pulsed repetition frequency,the power amplifier module shows power gain of Gp≥44 dB,output pulse peak power of Ppk≥30 W and total efficiency of η≥26%(Class B).The power amplifier shows no oscillation phenomenon over DC to 14.0 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期28-31,共4页
Semiconductor Technology
