摘要
设计制作非对称宽波导结构无铝量子阱激光器,可降低内部损耗,实现低阈值电流、高转换效率的目的,同时也增加了最大输出功率。采用金属有机气相化学沉积(MOCVD)进行外延生长,制作了100μm条宽,1500μm腔长的808nm激光器器件,镀膜后阈值电流230.5mA,斜率效率1.31W/A。连续电流条件下,得到最大输出功率超过8W,并且计算得到内吸收系数为1.7cm-1。
The Al-free quantum well laser diode(LD)with asymmetric broad-waveguide structure was designed,in order to improve the LDs' characteristics.The structure was grown by metal organic chemical vapor deposition(MOCVD).For the device with 100 μm wide stripe and 1 500 μm long cavity,under continuous wave(CW)operation condition,the typical threshold current is 230.5 mA,the slope efficiency is 1.31 W/A,the maximum output power reaches higher than 8 W,and the internal absorption value decreases to 1.7 cm-1.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期65-67,共3页
Semiconductor Technology
关键词
量子阱激光器
非对称结构
金属有机化学气相外延
quantum well laser diode
asymmetric broad-waveguide structure
metal organic chemical vapor deposition(MOCVD)
