^(60)Co γ射线辐照对AlGaN/GaN HEMT器件直流特性的影响

Influence of ^(60)Co γ-Rays on DC Performance of AlGaN/GaN HEMTs

主要研究了0.2Mrad60Coγ辐照前后AlGaN/GaN HEMT器件电学特性的变化,器件电学参数的退化主要表现为输出电流下降、栅泄漏电流增加、栅漏二极管的正/反向电流增大,而阈值电压几乎没有变化。这些变化是由于辐照产生的缺陷和陷阱使得2DEG浓度和迁移率下降,进而造成了器件的退化。

The DC performance of AlGaN/GaN HEMTs was studied before and after ^(60)Co γ-rays radiation,the degenerations of electron characteristics present as output current decreased,gate leak current increased,the forward and reverse current of gate-drain diode increased and the threshold voltage rarely changed.It is found out that the reasons for these changes are the traps and defects caused by radiation,which reduces the 2DEG density,so the devices degradate.