Mn掺杂GaN基稀磁半导体材料制备和特性研究

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

利用金属有机物化学气相沉积法在蓝宝石衬底上生长了Mn掺杂GaN基稀磁半导体材料。原子力显微镜研究表明,少量的Mn在样品表面起到活性作用。X射线衍射和喇曼散射研究表明,当Mn的掺杂浓度很低(<2.7%)时并没有观察到第二相的出现,当Mn的掺杂浓度达到3.9%时观察到了第二相。采用光学测试得到了由于Mn杂质引入杂质能级和缺陷而产生一个很宽的发射和吸收谱。

The Ga1-xMnxN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low(<2.7%)Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.