SiGe衬底离子注入模拟研究

Simulation on Ion Implantation into SiGe Substrate

运用分子动力学的研究方法,通过对Si1-xGex衬底建立模型,开发出了针对于Ge和Si1-xGex衬底进行低能离子注入模拟的软件。在不同注入能量条件下,把模拟B离子注入到Ge以及Si1-xGex衬底的结果与SIMS数据进行对比,模型和模拟方法得到了验证。在此基础上,针对不同组分的Si1-xGex衬底进行了离子注入模拟,模拟了Ge组分的变化对于Si1-xGex衬底离子注入的影响。

Using molecular dynamics method,the ion implantation simulation software aiming at Ge and Si1-xGex was developed by creating a new simulation structure for Si1-xGex substrate.Comparing the results of boron implantation into Ge and Si1-xGex with SIMS under different conditions,the model and method were verified.Moreover,the result and analysis of simulation into Si1-xGex with different content of Ge were presented.