6H-SiC体材料ICP刻蚀技术

Inductively Coupled Plasma Etching of Single Crystal 6H-SiC

采用SF6+O2作为刻蚀气体,对单晶6H-SiC材料的感应耦合等离子体(ICP)刻蚀工艺进行了研究。分析了光刻水平、ICP功率、偏置电压等工艺参数对刻蚀速率和刻蚀质量的影响。结果表明,2μm以上的各种图形都比较清晰,刻蚀深度与开口大小成正比,开口越窄,深度越浅。刻蚀速率随着ICP功率及偏置电压的增大而提高,XPS结果显示刻蚀表面残余的F元素只存在于表面10nm深度的部分。

Inductively coupled plasma(ICP)etching of single crystal 6H-silicon carbide(SiC)was investigated using oxygen-added sulfur hexafluoride(SF6)plasmas.The observed relations between the etching rate and ICP coil power,different bias voltages were discussed.The inf-luence of above-mentioned process conditions and photoresist patterning on etching quality were also investigated.Experimental results show that the results of photoresist patterning can signi-ficantly affect the SiC etching shape.The pattern graph whose etch width is more than 2 μm is clear.The SiC-etched depth is proportioned to the etching width,the narrower the etching width,the deeper the etching depth.The etching rate trends to increase with the increase of ICP coil power and bias voltage.The XPS results indicate that the residue of F ions after etching will rarely appear below etched surface 10 nm or deeper.