摘要
采用磁控溅射法生长了掺Er SiN薄膜,在高温退火后测试了薄膜的光致荧光谱。薄膜在可见光区域以及红外光区域都表现出了很强的光致发光,观察到了Er离子各高能级到基态的跃迁。对样品进行了RBS等物性分析,给出了薄膜的元素组成,并对Er离子的跃迁发光机制进行了讨论。
Er-doped silicon nitride films were deposited on silicon substrate by RF magnetron reaction sputtering system.After high temperature annealing the films show intense photoluminescence at both visible and infrared region.Resolved luminescence due to the transitions from all high energy levels up to 2H11/2 to the ground states of Er3+ was observed.RBS measurement was performed to investigate the composition of the films,and the mechanics of the photoluminescence was discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期298-300,共3页
Semiconductor Technology
基金
国家自然科学基金(60336010)
国家"973"重点基础研究(2007CB13404)
关键词
复合半导体材料
氮化硅
光效发光
铒
compound semiconductor material
Si3N4
photoluminescence
Er
