摘要
研究了高质量的Ga、Mn共掺ZnO外延薄膜的电子结构和光学特性,这些薄膜通过MOCVD沉积在蓝宝石(0001)面上。结果显示单Mn掺杂时的样品呈现高阻p型,Ga和Mn共掺时呈现n型,而载流子浓度出现一个最大值,然后随着Ga的掺杂量增大而下降,反映了高浓度掺杂Ga会出现Ga代O位的补偿效应。光致发光谱(PL)带边和吸收谱发生红移,并且衍射峰向大角度偏移,可能Ga的掺杂会导致带隙变窄。应用第一性原理软件对Ga、Mn共掺的ZnO体系的电子结构进行理论计算,结果表明共掺杂样品相比单Mn掺杂的ZnO体现出了半金属特性。
The structural,optical properties of high quality epitaxial Ga and Mn co-doped ZnO films were investigated.The films were deposited on(0001)sapphire substrate by MOCVD.The results show that the sample which only doped Mn presents p type with high resistance.The co-doped samples show a red shift at the band edge of PL and absorbance spectroscopy.Besides,once the dopant Ga introduced,there is a maximum for the electron concentration with certain Ga doped.It is probably attributed to compensating mechanism from Ga substituting for O sites.First principle theory calculation for(Ga,Mn)co-doped ZnO compared to that doped only Mn implies semimetal properties.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期345-348,共4页
Semiconductor Technology
基金
国家自然科学基金(60776013
60576017
50532100)
国家"973"项目基金(2006CB921803)
国家"863"项目基金(2007AA03Z404)
关键词
氧化锌
化合物半导体
稀磁半导体
半金属
ZnO
compound semiconductor
dilute magnetic semiconductor
semimetal
