期刊文献+

空穴注入结构对有机电致发光器件性能影响

Influence of Hole Injection Structures on Organic Electroluminescent Devices
下载PDF
导出
摘要 分别以CuPc、C60和C60/CuPc为空穴注入结构制备了ITO/HIL/NPB/Alq3/LiF/Al结构有机电致发光器件(HIL是空穴注入层)。相比于单层C60注入层器件,由于C60/CuPc结构器件中增加了CuPc作为空穴传输的能量阶梯,器件的电流密度和亮度分别被提高了96%和142%(10V电压下)。尽管CuPc器件的电流密度和亮度最大,但是C60/CuPc结构器件因改善了空穴和电子的注入平衡,器件的效率得到提高,最大效率为2.8cd/A。C60厚度从2nm增加到5nm后,器件性能急剧降低。 Organic electroluminescent devices using CuPc and fullerene C60 as hole-injecting buffer layer were prepared.The structure of the devices is ITO/HIL/NPB/Alq3/LiF/Al(HIL is hole injecting layer).Compared with the device with C60 buffer,the device with C60/CuPc buffer has higher properties,which current density and luminance are increased about 96% and 142% at 10V,respectively.Due to the better balance hole and electron concentrations,the device with C60/CuPc buffer provides the higher efficiency than the device with CuPc buffer,which maximum efficiency is 2.8 cd/A.The characteristics of the devices are sensitive to the thickness of C60.
出处 《半导体技术》 CAS CSCD 北大核心 2008年第S1期390-392,共3页 Semiconductor Technology
基金 国家自然科学基金(60876043)
关键词 有机电致发光 空穴注入 异质结 organic electroluminescent devices hole injection heterojunction
  • 相关文献

参考文献1

二级参考文献13

  • 1Sun Y, Giebink N C, Kanno H, Ma B, Thompson M E and Forrest S R 2006 Nature 440 908
  • 2Qin D S and Tao Y 2005 J. Appl. Phys. 97 044505
  • 3Huang Q, Walzer K, Pfeiffer M, Lyssenko V, He G F and Leo K 2006 Appl. Phys. Lett. 88 113515
  • 4Xie J, Zhang D Q, Wang L D, Duan L, Qiao J and Qiu Y 2006 Chin. Phys. Lett. 23 928
  • 5Zhou X, Qin D S, Pfeiffer M, Blochwitz-Nimoth J, Werner A, Drechsel J, Maennig B, Leo K, Bold M, Erk P and Hartmann H 2002 Appl. Phys. Lett. 81 4070
  • 6Bulovic' V, Tian P, Burrows P E, Gokhale M R, Forrest S R and Thompson M E 1997 Appl. Phys. Lett. 70 2954
  • 7Yuan Y Y, Han S, Grozea D and Lu Z H 2006 Appl. Phys. Lett. 88 093503
  • 8Van Slyke S A, Chen C H and Tang C W 1996 Appl. Phys. Lett. 69 2160
  • 9Chkoda L, Heske C, Sokolowski M and Umbach E 2000 Appl. Phys. Lett. 77 1093
  • 10Burrows P E and Forrest S R 1994 Appl. Phys. Lett. 64 2285

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部