摘要
A high Q HTS cavity resonator with resonating frequency f0=5.624 GHz was fabricated using high quality HTS film and high purity sapphire. The unloaded quality factor of the HTS resonator was as high as QU=1.09×106 at the nitrogen temperature, 77 K. A HTS local oscillator combining the high Q cavity resonator with a C-band low noise GaAs HEMT amplifier was then designed and constructed. The phase noise of the oscillator, measured by a HP 3048A noise measurement system, is -134 dBc/Hz at 10 kHz offset when the temperature is 77 K. This result is close to the best level reported by other groups in the world.
A high Q HTS cavity resonator with resonating frequency f(0) = 5.624 GHz was fabricated using high quality HTS film and high purity sapphire. The unloaded quality factor of the HTS resonator was as high as Q(U) = 1.09x10(6) at the nitrogen temperature, 77 K. A FITS local oscillator combining the high Q cavity resonator with a C-band low noise GaAs HEMT amplifier was then designed and constructed. The phase noise of the oscillator, measured by a HP 3048A noise measurement system, is -134 dBe/Hz at 10 kHz offset when the temperature is 77 K. This result is close to the best level reported by other groups in the world.
