摘要
A model for analyzing point defects in com-pound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was estab-lished. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.
A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.
基金
This work was jointly supported by the Ministry of Chinese National Science and Technology (Grant No. PAN95-YU-34)
Special Funds for Major State Basic Research Projects (Grant Nos. G20000683 and G20000365)
the National Natural Science Foundation of
