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Monte Carlo Simulation of the Coaxial Electrons Backscattering from Thin Films

Monte Carlo Simulation of the Coaxial Electrons Backscattering from Thin Films
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摘要 By using the Monte Carlo method, we simulated the trajectories of coaxial backscattering electrons corresponding to a new type of scanning electron microscope. From the calculated results, we obtain a universal expression, which describes with good accuracy the backscattering coefficient versus film thickness under all conditions used. By measuring the coaxial backscattering coefficient and using this universal formula, the thickness of thin films can be determined if the composition is known. By using the Monte Carlo method, we simulated the trajectories of coaxial backscattering electrons corresponding to a new type of scanning electron microscope. From the calculated results, we obtain a universal expression, which describes with good accuracy the backscattering coefficient versus film thickness under all conditions used. By measuring the coaxial backscattering coefficient and using this universal formula, the thickness of thin films can be determined if the composition is known.
出处 《Wuhan University Journal of Natural Sciences》 CAS 2002年第2期203-206,共4页 武汉大学学报(自然科学英文版)
基金 SupportedbytheNationalNaturalScienceFoundationofChina(No.9932 0 10 15 )
关键词 Monte Carlo simulation coaxial backscattered electrons thin film scanning electron microscope Monte Carlo simulation coaxial backscattered electrons thin film scanning electron microscope
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