摘要
:利用布里奇曼法合成了 Pb1 - x Snx Te单晶 ,测试了其密度、阻温特性、霍尔效应 .实验测得其载流子浓度和霍尔迁移率大约在 ( 3～ 1 6)× 1 0 1 7/ cm3和 1 0 2 cm2 /Vs;随着 x的增加晶体从 P型半导体向
Pb 1-x Sn xTe single crystals have been grown by Bridgman method. the density, electrical conductivity and Hall coefficient were measured. They have typical Hall mobilities and carrier concentration values of (3～16)×10 17 /cm 3 和10 2cm 2/Vs, respectively, and change from P-type to n-type semiconductor as the Sn content increases.
出处
《陕西科技大学学报（自然科学版）》
1999年第4期48-50,78,共4页
Journal of Shaanxi University of Science & Technology
