用正电子湮没技术研究NTDInP中的诱生缺陷

Study on defects in NTD InP using positron annihiation spectroscopy

采用正电子湮没技术对中子嬗变掺杂（ Ｎ Ｔ Ｄ） 后的磷化铟（ Ｉｎ Ｐ） 材 料进行了分析。 Ｎ Ｔ Ｄ Ｉｎ Ｐ 样品经退火后的低温实验结果表明，其正电子平均寿命均随温度升高而缩短。对掺 Ｓｎ的 Ｉｎ Ｐ 样品进行的低温实验也反映出同样的变化规律。文章分析了这一现象，并研究了嬗变后 Ｉｎ Ｐ

Two pieces of high purity InP sample extracted from the same wafer are examined by positron annihilation spectrum analysis after having been processed by means of thermal nectron transmutation(NTD).The low temperature experiment after the annealing of InP shows that there is an abnormal reduction of average lifetime with increasing temperature.And a low temperature experiment on an n-type InP(Sn) sample doped by traditional method exhibits the same phenomenon.The mechanism of this phenomenon is analyzed as well as the results of the annealing experiment.