分子束外延ZnS_(1-x)Te_x单晶薄膜特性分析

Property analysis of MBE-grown ZnS 1- x Te x thin films

通过精确的测量发现，分子束外延（ Ｍ Ｂ Ｅ） 生长的Ⅱ－ Ⅵ族三元合金碲硫锌（ Ｚｎ Ｓ１ － ｘ Ｔｅ ｘ）（０ ≤ｘ ≤１） 半导体单晶薄膜中 Ｚｎ 和 Ｔｅ 修正的俄歇参数α′随 ｘ 增大近似线性增加，且前者大于后者；同时还发现 Ｔｅ ４ｄ３／２ 和 Ｔｅ ４ｄ５／２ 光电子谱峰间距随 ｘ

The modified Auger parameter (α′)of Zn and Te in ZnS 1- x Te x (0≤ x ≤1) single-crystal alloy thin films grown by MBE is measured with high resolution.It is shown that α′increases almost linearly with x and that the variations of α′Z n are larger than those of α′ Te .Furthermore,it is similar for the variation of XPS peaks of Te 4d 3/2 and Te 4d 5/2 with x .