无杂质空穴扩散法研制可调InGaAs/InP激光器

Tunable InGaAs/InP lasers developed by impurity-free vacancy diffusion

用无杂质空穴扩散（ Ｉ Ｆ Ｖ Ｄ） 法研制了延伸光腔分立电极 Ｉｎ Ｇａ Ａｓ／ Ｉｎ Ｐ 半导体激光器。激光器材料的光发光谱说明由 Ｉ Ｆ Ｖ Ｄ 法可以造成量子阱材料带隙蓝移（３０ ～４０）ｎ ｍ 。材料带隙蓝移量与 Ｉ Ｆ Ｖ Ｄ 处理中的退火温度和退火时间有关，表面 Ｓｉ Ｏ２ 厚度亦有一定影响。延伸光腔波导损失较低，由此方法制作的分立电极激光器的阈值电流随延伸光腔部分所加的调制电流而变化，变化的阈值电流可从４０ ｍ Ａ 降至３０ ｍ Ａ。

An InGaAs/InP quantum well laser with external-cavity discrete electrodes with developed by impurity-free vacancy diffusion(IFVD) is presented.The photoluminescent results indicate that 30-40 nm blue shift of band gap can be created by IFVD and the shift depends on annealing temperature,annealing time and the thickness of SiO 2 deposition.The external cavity exhibits low loss waveguide behavior and the threshold current of the InGaAs/InP laser variates with the turning injection current on the external side from 40 mA to 30 mA.