摘要
通过硅氧碳键( Si- O- C) 将两个内铵盐型碳菁染料在硅表面化学成膜,利用表面增强喇曼光谱( S E R S) 和 X 射线光电子能谱( X P S) 确证其结构,并测定了键合染料膜硅片的光谱响应和表面光电压。结果表明染料可使硅敏化。
Two inner salt carbocyanine dyes are chemically filmed on the Si surface through Si-O-C bond.The structures are characterized by SERS and XPS.And the spectral response and surface photovoltage spectrum are measured.These results show that the Si wafer can be sensitized by dyes,and the filmed Si wafers exhibit photovoltage effect.
出处
《半导体光电》
CAS
CSCD
北大核心
1999年第2期142-145,共4页
Semiconductor Optoelectronics
基金
陕西省自然科学基金
关键词
硅
光敏染料
化学成膜
光电特性
Silicon, Photosensitive Dye, Chemically Filming,Photoelectric Properties