GaInAs/AlInAs量子阱激光器特性——价带间光吸收对微分量子效率和特征温度的影响

Characteristics of GaInAs/AlInAs quantum well laser ——Effect of intervalence band absorption on differential quantum efficiency and characteristic temperature

计算和分析了晶格匹配ＧａＩｎＡｓ／ＡｌＩｎＡｓ半导体量子阱激光器（ＱＷＬ）中的价带间光吸收系数及其对微分量子效率（η０）和特征温度（Ｔ０）的影响。结果表明，价带间光吸收系数随带隙增加而减小，随温度和载流子浓度增加而增加，其所引起的阈值和出光微分量子效率的变化趋势虽然与实验观察到的相类似，但数值上却不起明显的作用。因此，价带间光吸收这种温敏光子损耗机制对长波长半导体激光器的温度效应不可能起主要的作用。

The intervalence band absorption(IVBA) coefficient in the lattice-matched GaInAs/AlInAs semiconductor quantum well laser (QWL) and its effect on differential quantum efficiency ( η 0) and the characteristic temperature ( T 0) are calculated and analyzed. It is shown that the IVBA coefficient decreases with the increase of band gap and increases with the increase of temperature and carrier density. The trend of temperature variation of threshold current and differential quantum efficiency caused by IVBA coefficient is similar to that observed in the experiment,though it is not significant numerically. Therefore, the IVBA,a kind of temperature sensitive photon loss mechanism,won't be able to play a dominant role in temperature effect of long wavelength semiconductor lasers.