摘要
Naphthalimide derivatives, N-ethyl-4-acetylamino-l,8-naphthalimide (EAAN) and polymer with N-propyl-4-acetylamino-1,8-naphthalimide (PAAN) side-chain (P-PAAN) were successfully synthesized. Electroluminescent devices of ITO/PVK(120nm)/EAAN(50nm)/Al(150nm) (I) and ITO/PVK+ P-PhAN(10:1) (50nm)/Al( 150nm) (II) constructed with EAAN and P-PAAN as the emitting layer were investigated, whereas the single-layer devices of ITO/EAAN or P-PAAN(50nm)/Al(150nm) (III) were not observed to have any e-mission light. The emission results revealed that the exaction recombination formed by positive and negative charge carriers injected from electrodes of devices I and II was much more balanced than that of devices III, which implied that naphthalimide derivatives are a new type of electron-transporting materials with high performance. The electron-transporting properties of naphthalimide derivatives were also elucidated by investigation of the electroluminescent behaviors from both devices of ITO/PPV (80nm)/Al and ITO/PPV (80nm)/EAAN (20)nm)/Al hch fabricated with EAAN as the electron-transporting layer.
Naphthalimide derivatives, N-ethyl-4-acetylamino-l,8-naphthalimide (EAAN) and polymer with N-propyl-4-acetylamino-1,8-naphthalimide (PAAN) side-chain (P-PAAN) were successfully synthesized. Electroluminescent devices of ITO/PVK(120nm)/EAAN(50nm)/Al(150nm) (I) and ITO/PVK+ P-PhAN(10:1) (50nm)/Al( 150nm) (II) constructed with EAAN and P-PAAN as the emitting layer were investigated, whereas the single-layer devices of ITO/EAAN or P-PAAN(50nm)/Al(150nm) (III) were not observed to have any e-mission light. The emission results revealed that the exaction recombination formed by positive and negative charge carriers injected from electrodes of devices I and II was much more balanced than that of devices III, which implied that naphthalimide derivatives are a new type of electron-transporting materials with high performance. The electron-transporting properties of naphthalimide derivatives were also elucidated by investigation of the electroluminescent behaviors from both devices of ITO/PPV (80nm)/Al and ITO/PPV (80nm)/EAAN (20)nm)/Al hch fabricated with EAAN as the electron-transporting layer.
基金
National Natural Science Foundation of China.
