摘要
The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.
The diamond film on single crystal silicon substrate in threekinds of substrate is deposited by pre- treatment method usingmicrowave plasma, the diamond film is analyzed using SEM and Raman,the reasons why substrate pretreatment affects nucleation and growthare probed. The results show that substrate pretreatment di- rectlyaffects nucleation and growth of diamond film, ho- mogeneousnucleation and growth can be formed only in suitable pretreatmentmethod.
基金
The research was supported by the Major Research Plan of Wuhan City(961001005-1)
the Open Fund of State Key Laboratory for Simulation
Die Technology in Huazhong Univ.of Sci.&Tech.(99-7)
