摘要
a-Si:C:N:H thin films have been deposited at room temperature by r.f. reactive-sputtering of a Si target in an Ar+H-2+N-2+CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure and optical, electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si:C:N:H films are thermally stable within the temperature ranging from 200 to 800 degrees C. They are of interest for the potential applications in electronic devices.
a-Si:C:N:H thin films have been deposited at room temperature by r.f. reactive-sputtering of a Si target in an Ar+H-2+N-2+CH4 gas mixture. Fourier transform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure and optical, electrical properties are obviously modified readily by controlling the process parameters of deposition. The nitrogen-rich a-Si:C:N:H films are thermally stable within the temperature ranging from 200 to 800 degrees C. They are of interest for the potential applications in electronic devices.
