摘要
The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10(-1) similar to 10(1) Omega(-1).cm(-1), two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si:H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) film disappears.
The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10(-1) similar to 10(1) Omega(-1).cm(-1), two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si:H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) film disappears.
