HVPE外延GaN膜中黄带的光致发光激发谱研究

Investigation of photoluminescence excitation spectra of yellow luminescence from GaN films grown by HVPE

测量了氢化物气相外延方法生长的非特意掺杂和掺碳GaN外延膜的光致发光谱 ,并在光致发光谱峰位2 .2 5eV(5 5 0nm)附近分别测量了光致发光激发谱 ,对两者进行了比较 .从光致发光谱中发现掺碳使黄带明显增强 ,从光致发光激发谱中看到了掺碳引起的约 3.38～ 2 .6 7eV(36 7～ 4 6 5nn)范围内的特征激发带 .利用CC曲线模型说明了特征激发带和黄带之间的关系 ,分析了黄带的可能起因 .

Photoluminescence spectra and photoluminescence excitation spectra for the light emission of around 2.25 eV from undoped and C doped GaN films grown by HVPE are measured. The comparison shows that dopping of carbon into GaN produces a significant yellow luminescence around 2.25 eV in PL spectra, and a characteristic excitation band due to C doped about 3.38～2.67 eV has also been observed in PLE spectra. The relation between the characteristic excitation band and the emission band is interpreted with the simple configuration coordinate curve model. The possible origins of yellow luminescence have been inquired.