摘要
Hydrogen-free high sp^3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm^2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.
Hydrogen-free high sp3 content amorphous diamond (AD) films are deposited on three different substrates—Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/TI/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.
基金
Project supported by the National High-Tech Program of China.
