缓冲回路分布电感与GTO特征参数关系的研究

The Study of Relation between Snubber Scatterd Inductance and GTO Thyristor Characteristic Parameters

本文研究了缓冲回路分布电感对GTO关断性能的影响及作用机理。GTO的特征参数,如尖峰电压U_p、峰值功耗P_(fm)、阳极再加电压U_(DM)及反冲电压U_(rm),这些参数值直接关系到GTO能否正常关断。而这些特征参数值在一定程度上取决于缓冲回路分布电感。文中详细分析了缓冲回路分布电感对GTO关断过程中各特征参数的影响。重点阐述了缓冲回路自感减小后使尖峰电压、峰值功耗值减小,同时使其产生时刻前移的原理。本文还指出加大缓冲回路自感可使阳极再加电压峰值稍有降低并同时使反冲电压略有上升。本文还阐述了缓冲电阻支路分布电感对反冲电压值的大小有决定作用。文中对所有论点进行了充分的实验验证。

GTO thyristor' s characteristic parameters (such as Up , dua/ dt, UDM ,Urm , Pfm) have important influence on whether GTO thyristor could turn off normally. These characteristic parameter's values depend on the value of snubber circuit scattered inductance. In this papre, the influence of snubber circuit scattered inductance parameters to the GTO characteristic parameters are studied. It is pointed that the decrease of the suubber circuit self - induction coefficient will make Up Pfm decrease. It also pointed out that the exist of snubber resistance branch scattered inductance is the fundamental reason of Urm arise in this paper. In the end, sufficient experi-mental are given to test and verify the authenticity to all theory.