7[4]D Maksimovic,A M Stankovic,V J Thottuvelil,et al.Modeling and simulation of power electronic converters[J].IEEE Proc,2001,(89) 6:813-821.
8[5]B Johnson,H Hess,J A Martinez.Parameter determination for modeling system transients-part Ⅶ:semiconductors[J].IEEE Trans,2005,(20) 7:2086-2094.
9[12]Alllen R Hefner,JR.Analytical modeling of devicecircuit interactions for the power insulated gate bipolar transistor (IGBT)[C].IEEE Trans-on Industrial Applications,1990,26 (6):995-1005.
10ALLEN R. HEFNER, JR. Analytical Modeling of Device Circuit Interactions for Bipolar Transistor(IGBT)[J] the Power Insulated Gate IEEE Trans. on industrial Applications. 1990, 26(6): 995-1005.
