摘要
A model of enhancement mode GaAs MESFET (EFET) for low power consumption and low noise applications has been obtained by using a small signal equivalent circuit whose component values are derived from the physical parameters and the bias condition. The dependence of the RF performance and DC power consumption on physical, material and technological parameters of EFET is also studied. The optimum range of the physical parameters is given which is useful for the design of active device of ultra low power consumption MMIC.
A model of enhancement mode GaAs MESFET (EFET) for low power consumption and low noise applications has been obtained by using a small signal equivalent circuit whose component values are derived from the physical parameters and the bias condition. The dependence of the RF performance and DC power consumption on physical, material and technological parameters of EFET is also studied. The optimum range of the physical parameters is given which is useful for the design of active device of ultra low power consumption MMIC.
