Etching Fused Quartz With CHF_3/Ar

报道了用氟利昂ＣＨＦ３和氩气Ａｒ作工作气体的反应离子刻蚀融石英的技术，研究了气体流速、腔压和射频等离子体功率对刻蚀速度的影响，并分析了刻蚀工艺对样品表面的污染，同时也考察了刻蚀工艺的均匀性和重复性。为了优化刻蚀工艺，采用Ｒｓ１／Ｄｉｓｃｏｖｅｒ软件工具设计优化实验。实验中射频等离子体功率在１２０～１６０Ｗ范围，氩气和氟利昂流速分别在１５～３５ｓｃｍ和２０～５０ｓｃｃｍ范围，腔压在１００～１４０ｍＴｏｒ范围，相应的刻蚀速度为１５～２５ｎｍ／ｍｉｎ。

The reactive ion etching technology for fused quartz with CHF 3 and Ar as operating gas is reported.The influences of gas flow speed,chamber pressure,and radio frequency plasma power on the etching speed are investigated.The pollution of the etching technology on the sample surface is analyzed.The homogeneity and repeatability of the etching technology are also exploited.In order to optimize the etching technology,Rs1/Discover software is applied to the optimization of the experiments.The power of the radio frequency plasma in experiments is within the range of 120￣160W,The flow rate of Ar and CHF 3 is in the range of 15￣35 sccm and 20￣50 sccm,respectively.The chamber pressure is in the range of 100￣140 mTorr and the corresponding etching speed is 15￣25 nm/min.