摘要
探讨了IGBT功率电路尖峰电压产生的原因，并针对第三代IGBT，给出了适应不同功率的吸收电路。
The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd gen-eration IGBT.
出处
《石家庄铁道大学学报（自然科学版）》
1997年第S1期101-104,共4页
Journal of Shijiazhuang Tiedao University(Natural Science Edition)
