摘要
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.
