Defect Production in Si Irradiated with 750MeV Ar^+ Ions
Defect Production in Si Irradiated with 750MeV Ar￣+ Ions
摘要
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1ZhangChonghong,S.E.Donnelly,J.H.Evans.Modeling of Defect Production in Helium-implanted Silicon Carbide Crystal—an explanation of our TEM results[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2002(1):56-58.
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2ZhangChonghong,SongYin,DuanJinglai,SunYoumei,MaHongji,NieRui,ShenDingyu.RBS Analysis of Damage Evolution in Helium-implanted 4H-SiC[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2003(1):59-60.
