摘要
Photosensitive polyimide precursor containing glycol monocinnamate group was synthesized by a new method. The photoresist, made from the above polyimide precursor, was spin coated onto silicon wafers, prebaked and then exposed to UV light. The appropriate conditions of the photolithographic procedures were determined. This photosensitive polyimide precursor showed good light sensitivity and the polyimide which was obtained by heating the polyimide precursor had a high thermal stability.
Photosensitive polyimide precursor containing glycol monocinnamate group was synthesized by a new method. The photoresist, made from the above polyimide precursor, was spin coated onto silicon wafers, prebaked and then exposed to UV light. The appropriate conditions of the photolithographic procedures were determined. This photosensitive polyimide precursor showed good light sensitivity and the polyimide which was obtained by heating the polyimide precursor had a high thermal stability.
