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STUDIES ON HOMOGENEOUS SCAVENG REACTION IN  CONFINED ETCHANT LAYER TECHNIQUE FOR NANOLITHOGRAPHY (I) ──As (III) SCAVENGING BROMINE REACTION

STUDIES ON HOMOGENEOUS SCAVENGING REACTION IN CONFINED ETCHANT LAYER TECHNIQUE FOR NANOLITHOGRAPHY(I)──As(III)SCAVENGING BROMINE REACTION
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摘要 It is reported that the As(III) scavenging bromine reaction rate constant can be determined by means of measuring the limiting current of a rotating disk electrode (RDE).The As(III) scavenging bromine second order reactionrate constants in sulfuric acid are 3.6×10 ̄5Lmol ̄-1.s ̄-1 at 20℃ and 8.9×10 ̄5Lmol ̄-1s ̄-1at 41℃ respectively. The activation energy is 33 KJ.mol-1.The results showsthat As (III) can be used as scavenging etchant of bromine in submicrometerand three-dimension lithography. It is reported that the As(III) scavenging bromine reaction rate constant can be determined by means of measuring the limiting current of a rotating disk electrode (RDE).The As(III) scavenging bromine second order reactionrate constants in sulfuric acid are 3.6×10 ̄5Lmol ̄-1.s ̄-1 at 20℃ and 8.9×10 ̄5Lmol ̄-1s ̄-1at 41℃ respectively. The activation energy is 33 KJ.mol-1.The results showsthat As (III) can be used as scavenging etchant of bromine in submicrometerand three-dimension lithography.
出处 《Chinese Chemical Letters》 SCIE CAS CSCD 1995年第3期243-246,共4页 中国化学快报(英文版)
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