摘要
The AlMgSi wires with and without Ce were aged at temperatures 18, 30, 40, 50, 70, 100, 120 and 140 degrees C respectively after quenching from solid solution states, and their resistivity was measured in situ during aging. The results showed that the resistance of the samples aged at the temperatures given above except the one at 140 degrees C was increasing with aging time. The rate of increase was large initially and then reduced gradually. The relative resistance increases Delta R/R(0) of the samples with Ce were smaller than that without Ce under similar conditions. The result assumed to be due to reduction of the dispersion of G. P. zone by Ce.
The AlMgSi wires with and without Ce were aged at temperatures 18, 30, 40, 50, 70, 100, 120 and 140 degrees C respectively after quenching from solid solution states, and their resistivity was measured in situ during aging. The results showed that the resistance of the samples aged at the temperatures given above except the one at 140 degrees C was increasing with aging time. The rate of increase was large initially and then reduced gradually. The relative resistance increases Delta R/R(0) of the samples with Ce were smaller than that without Ce under similar conditions. The result assumed to be due to reduction of the dispersion of G. P. zone by Ce.
