MICROSTRUCTURES　AND　OPTICAL　PROPERTIES　OF　Te_（81）Ge_（15）Sb_4　THIN　FILMS　USED　FOR　PHASE　CHANGE　RECORDING　MATERIALS

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Amorphous Te81Ge15Sb4 thin films have been prepared by meltquenching then vacuum evaporation technique. The differences of microstructures and optical properties of Te81Ge15Sb4 films between the amorphous and the crystalline states have been studied. The results show that this material is a hopeful storage medium for short-wave laser, and can improve recording density.