摘要
Vertical gradient freezing (VGF) growth of Hg1-xCdxTe (x=0.19) was studied. Porosity can be eliminated by adjusting temperature program of growth. As expected, subgrain boundaries and etch pit densities can be reduced considerably if low temperature gradient is used.
Vertical gradient freezing (VGF) growth of Hg1-xCdxTe (x=0.19) was studied. Porosity can be eliminated by adjusting temperature program of growth. As expected, subgrain boundaries and etch pit densities can be reduced considerably if low temperature gradient is used.
