摘要
The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in thetwo sides of the grain boundary can be easily obtained with this method. By controlling the growth condition,a 45° YBCO grain boundary can be made on the SrTiO_3 substrate.
The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in thetwo sides of the grain boundary can be easily obtained with this method. By controlling the growth condition,a 45° YBCO grain boundary can be made on the SrTiO_3 substrate.
